TK25A10K3 2013-11-01 1 toshiba field effect transistor s ilicon n channel mos type (u-mosiv) TK25A10K3 swiching regulator applications ? low drain-source on resistance: r ds (on) = 31 m (typ.) ? high forward transfer admittance: |y fs | = 50 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 100 v) ? enhancement-model: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 100 v drain-gate voltage (r gs = 20 k ) v dgr 100 v gate-source voltage v gss 20 v dc (note 1) i d 25 drain current pulse (note 1) i dp 50 a drain power dissipation (tc = 25c) p d 25 w single pulse avalanche energy (note 2) e as 39 mj avalanche current i ar 25 a repetitive avalanche energy (note 3) e ar 1.72 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heav y loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly ev en if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: please use devices on condition that the channel temperature is below 150c. note 2: v dd = 25 v, t ch = 25c, l = 100 h, r g = 25 , i ar = 25 a note 3: repetitive rating; pulse width li mited by maximum channel temperature. thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch ? c) 5.0 c / w thermal resistance, channel to ambient r th (ch ? a) 62.5 c / w this transistor is an electrostatic sensit ive device. please handle with caution. unit: mm 1: gate 2: drain 3: source jedec ? jeita sc-67 toshiba 2-10u1b weight: 1.7 g (typ.) 1 3 2 start of commercial production 2009-06
TK25A10K3 2013-11-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 20 v, v ds = 0 v ? ? 100 na drain cut-off current i dss v ds = 100 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 100 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ?20 v 65 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain-source on resistance r ds (on) v gs = 10 v, i d = 12 a ? 31 40 m forward transfer admittance ? y fs ? v ds = 10 v, i d = 12 a 25 50 ? s input capacitance c iss ? 1580 ? reverse transfer capacitance c rss ? 135 ? output capacitance c oss v ds = 10v, v gs = 0 v, f = 1 mhz ? 200 ? pf rise time t r ? 13 ? turn-on time t on ? 25 ? fall time t f ? 8 ? switching time turn-off time t off ? 37 ? ns total gate charge (gate-source plus gate-drain) q g ? 34 ? gate-source charge q gs ? 7 ? gate-drain (?miller?) charge q gd v dd 80 v, v gs = 10 v, i d = 25 a ? 13 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 25 a pulse drain reverse current (note 1) i drp ? ? ? 50 a forward voltage (diode) v dsf i dr = 25 a, v gs = 0 v ? ? ? 1.4 v reverse recovery time t rr ? 57 ? ns reverse recovery charge q rr i dr = 25 a, v gs = 0 v, di dr /dt = 50 a/ s ? 61 ? nc marking duty 1%, t w = 10 s 0 v 10 v v gs r l = 4 v dd 50 v i d = 12.5 a v out 4.7 lot no. note 4 part no. (or abbreviation code) k25a10k 3 note 4: a line under a lot no. ident ifies the indication of product labels not underlined: [[pb]]/includes > mcv underlined: [[g]]/rohs compatible or [[g]]/rohs [[pb]] please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of product. the rohs is directive 2011/65/e u of the european parliament and of the council of 8 june 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
TK25A10K3 2013-11-01 3 v gs = 10 v 1 10 100 10 100 1 100 1 10 1000 tc = ? 55c 25 100 100 0.1 10 4 6 8 10 0 0.4 0.6 0.8 1 0.2 02 i d = 25 a 6 12 4 10 0 8 16 4 0 2 6 tc = ? 55c 100 25 12 20 8 0.8 1.2 1.6 2 0 20 40 50 10 00.4 v gs = 4.5 v 5.25 4.75 8 10 5.5 6 30 5 v gs = 4.5 v 4.75 5.25 5 8 10 0 5 10 15 20 25 0.4 0.6 0.8 1 0 0.2 5.5 6 common source tc = 25c pulse test i d ? v ds i d ? v ds i d ? v gs v ds ? v gs common source tc = 25c pulse test |y fs | ? i d r ds (on) ? i d drain-source voltage v ds (v) drain current i d (a) drain-source voltage v ds (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) drain current i d (a) drain-source on resistance r ds (on) (m ) drain-source voltage v ds (v) forward transfer admittance ? y fs ? (s) common source tc = 25c pulse test common source tc = 25c pulse test common source v ds = 10 v pulse test common source v ds = 10 v pulse test
TK25A10K3 2013-11-01 4 v ds v dd = 20 v v gs 40 80 20 12 4 0 0 0 20 50 20 40 60 100 80 30 40 10 16 8 0 ? 80 0 40 80 120 160 ? 40 0.8 1.6 2.4 3.2 4 100 10000 1000 1 0.1 100 10 c iss c oss c rss 1 10 0 ? 0.4 ? 1.2 100 v gs = 0 v 1 10 5 3 ? 2 10 1 ? 0.8 ? 1.6 i d = 25 a 0 100 40 60 ? 80 0 40 80 120 160 ? 40 80 20 6 12 v th ? tc r ds (on) ? tc i dr ? v ds p d ? tc common source tc = 25c pulse test common source v gs = 0 v f =1mhz tc = 25c common source v ds = 10 v i d = 1ma pulse test case temperature tc (c) gate threshold voltage v th (v) case temperature tc (c) total gate charge q g (nc) capacitance c (pf) capacitance ? v ds drain-source voltage v ds (v) drain-source on resistance r ds (on) (m ) case temperature tc (c) drain reverse current i dr (a) drain-source voltage v ds (v) drain power dissipation p d (w) drain-source voltage v ds (v) dynamic input / output characteristics gate-source voltage v gs (v) common source i d = 25 a tc = 25c pulse test common source pulse test 20 30 50 0 0 80 40 160 10 40 120 v gs = 10 v
TK25A10K3 2013-11-01 5 100 s * 1 ms * 0.1 10 1 100 1000 10 v dss max 1 0.1 100 10 100 1m 10m 100m 1 10 0.1 1 10 duty=0.5 0.2 0.1 0.05 0.02 0.01 p dm duty = t/t r th (ch-c) = 5.0c/w t t 0.001 0.01 e as ? t ch channel temperature (initial) t ch (c) avalanche energy e as (mj) 0 v 15 v i ar b vdss v dd v ds r g = 25 v dd = 25 v, l = 100 h ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as test circuit waveform r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) / r th (ch-c) single pulse * single pulse tc=25 curves must be derated linearly with increase in temperature. i d max (pulse) * safe operating area drain-source voltage v ds (v) drain current i d (a) e 80 60 40 20 0 25 50 100 125 100 75 150 l = 100 h v dd = 25 v i ar = 25 a
TK25A10K3 2013-11-01 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situat ions in which a malfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest ve rsions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and applicat ion notes for product and the precautions and condi tions set forth in the "toshiba se miconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications , including but not limited to (a) determining t he appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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